JPH0318745B2 - - Google Patents
Info
- Publication number
- JPH0318745B2 JPH0318745B2 JP58040686A JP4068683A JPH0318745B2 JP H0318745 B2 JPH0318745 B2 JP H0318745B2 JP 58040686 A JP58040686 A JP 58040686A JP 4068683 A JP4068683 A JP 4068683A JP H0318745 B2 JPH0318745 B2 JP H0318745B2
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- semiconductor
- cell mat
- region
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015654 memory Effects 0.000 claims description 115
- 239000004065 semiconductor Substances 0.000 claims description 70
- 239000003990 capacitor Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 39
- 239000000969 carrier Substances 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000014759 maintenance of location Effects 0.000 description 21
- 238000009792 diffusion process Methods 0.000 description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 108091006146 Channels Proteins 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 239000003574 free electron Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58040686A JPS58169961A (ja) | 1983-03-14 | 1983-03-14 | ダイナミツク記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58040686A JPS58169961A (ja) | 1983-03-14 | 1983-03-14 | ダイナミツク記憶装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51138341A Division JPS6041463B2 (ja) | 1976-11-19 | 1976-11-19 | ダイナミツク記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58169961A JPS58169961A (ja) | 1983-10-06 |
| JPH0318745B2 true JPH0318745B2 (en]) | 1991-03-13 |
Family
ID=12587424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58040686A Granted JPS58169961A (ja) | 1983-03-14 | 1983-03-14 | ダイナミツク記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58169961A (en]) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60198772A (ja) * | 1984-03-22 | 1985-10-08 | Nec Ic Microcomput Syst Ltd | 半導体集積装置 |
| JPS6132567A (ja) * | 1984-07-25 | 1986-02-15 | Hitachi Micro Comput Eng Ltd | 半導体集積回路装置 |
-
1983
- 1983-03-14 JP JP58040686A patent/JPS58169961A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58169961A (ja) | 1983-10-06 |
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